Vol.32 (2002), No. 3

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Low energy ion beam-induced modification of InSb surface studied at nanometric scale
Krok Franciszek, Kolodziej Jacek J., Such Bartosz, Piatkowski Piotr, Szymonski Marek, Odendaal Quintin R., Malherbe Johan B.
pp. 221-226 No PDF file No PDF file in base  
Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence
Miczek Marcin, Adamowicz Bogusława, Hasegawa Hideki
pp. 227-233 No PDF file No PDF file in base  
Ultra-low frequency spectra for Li+ ion thermoemission noise
Gladyszewski Longin
pp. 235-239 No PDF file No PDF file in base  
Changes of properties during the annealing Fe28Co50Si9B13 and Fe28Ni50Si9B13 metallic glasses
Jakubczyk Ewa, Jakubczyk Mieczyslaw
pp. 241-246 No PDF file No PDF file in base  
Ordering of the vicinal Si(15 1 0) surface at low Au coverage
Mazurek Piotr, Jalochowski Mieczyslaw
pp. 247-252 No PDF file No PDF file in base  
Growth of the optical layers in a stochastic simulation. Study of a film morphology
Oleszkiewicz Waldemar, Romiszowski Piotr
pp. 259-265 No PDF file No PDF file in base  
Influence of Ar and He implantation on surface morphology of polymers
Piatkowska Anna, Jagielski Jacek, Turos Andrzej, Slusarski Ludomir, Bielinski Dariusz
pp. 267-273 No PDF file No PDF file in base  
Erythrocyte surface modification due to the pharmacological treatment studied with atomic force microscopy
Targosz Marta, Czuba Pawel, Szymonski Marek
pp. 275-281 No PDF file No PDF file in base  
H3+-synthesis on the surface of d-transition metals during the process of field desorption
Tomaszewska Agnieszka, Stepien Zdzislaw M.
pp. 283-289 No PDF file No PDF file in base  
Optical gain saturation effects in InAs/GaAs self-assembled quantum dots
Wasiak Michal, Bugajski Maciej, Machowska-Podsiadlo Elzbieta, Ochalski Tomasz, Katcki Jerzy, Sarzala Robert P., Mackowiak Pawel, Czyszanowski Tomasz, Nakwaski Wlodzimierz, Chen J.X., Oesterle Ursula, Fiore Andrea, Ilegems Mark
pp. 291-299 No PDF file No PDF file in base  
Influence of adsorbed atoms on the charge transfer in atom/ion­surface collision
Wiertel Malgorzata, Taranko Ewa, Taranko Ryszard
pp. 301-305 No PDF file No PDF file in base  
Photoreflectance spectroscopy of semiconductor device active regions: quantum wells and quantum dots
Sek Grzegorz, Misiewicz Jan, Forchel Alfred
pp. 307-317 No PDF file No PDF file in base  
Defect structure changes in thin layers of semiconductors annealed under hydrostatic pressure
Bak-Misiuk Jadwiga, Misiuk Andrzej, Domagala Jaroslaw
pp. 319-325 No PDF file No PDF file in base  
Optical properties of AlN thin films obtained by reactive magnetron sputtering
Brudnik Andrzej, Czapla Adam, Kusior Edward
pp. 327-331 No PDF file No PDF file in base  
Determination of stress in Au/Ni multilayers by symmetric and asymmetric X-ray diffraction
Chocyk Dariusz, Proszynski Adam, Gladyszewski Grzegorz, Labat Stephane, Gergaud Patrice, Thomas Oliver
pp. 333-337 No PDF file No PDF file in base  
Plasma dry etching of monocrystalline silicon for the microsystem technology
Gorecka-Drzazga Anna
pp. 339-346 No PDF file No PDF file in base  
Optimized structure of SiCxNy–Si(111) interfaces by molecular dynamics simulation
Gruhn Wojciech, Kityk Ivan V.
pp. 347-354 No PDF file No PDF file in base  
Bonding with atomic rearrangement – new possibilities in material and devices technology
Hruban Andrzej, Strzelecka Stanislawa, Wegner Elzbieta, Pawlowska Marta, Gladki Andrzej, Stepniewski Roman, Jasinski Jacek, Bozek Rafal
pp. 355-364 No PDF file No PDF file in base  
Influence of the thermal annealing on hydrogen concentration in GaN layers – SIMS characterization
Jakiela Rafal, Jasik Agata, Strupinski Wlodzimierz, Gora Krzysztof, Kosiel Kamil, Wesolowski Marek
pp. 365-371 No PDF file No PDF file in base  
Optical anisotropy of Pb nanowires on Si(533) surface
Jalochowski Mieczyslaw, Strozak Miroslaw
pp. 373-379 No PDF file No PDF file in base  
Optical properties of nominally undoped n-type MOVPE GaN epilayers
Kudrawiec Robert, Misiewicz Jan, Paszkiewicz Regina, Paszkiewicz Bogdan, Tlaczala Marek
pp. 381-388 No PDF file No PDF file in base  
Forming the high quality CoSi2 by solid phase epitaxy
Mazurek Piotr, Daniluk Andrzej, Paprocki Krzysztof
pp. 389-395 No PDF file No PDF file in base  
Effect of uniform stress on SiO2/Si interface in oxygen-implanted Si and SIMOX structures
Misiuk Andrzej, Bryja Leszek, Katcki Jerzy , Ratajczak Jacek
pp. 397-407 No PDF file No PDF file in base  
High-energy electron emission from MIS-structures
Olesik Jadwiga
pp. 409-416 No PDF file No PDF file in base  
Computer controlling of MOVPE process
Piasecki Tomasz, Kosnikowski Wojciech, Paszkiewicz Bogdan, Panek Marek
pp. 417-420 No PDF file No PDF file in base  
Non-standard techniques of surface characterization in scanning electron microscope
Slowko Witold, Drzazga Wlodzimierz
pp. 425-430 No PDF file No PDF file in base  
Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process
Wojcik Anna, Piwonski Tomasz, Ochalski Tomasz J., Kowalczyk Emil, Bugajski Maciej, Grzegorczyk Andrzej, Macht Lukasz, Haffouz Soufien, Larsen Poul K.
pp. 431-435 No PDF file No PDF file in base  
Transistors today – after 50 years in microelectronics
Boratynski Boguslaw
pp. 437-447 No PDF file No PDF file in base  
Computer simulation of performance characteristics of (GaIn)(NAs) diode lasers
Sarzala Robert P.
pp. 449-460 No PDF file No PDF file in base  
High power AlGaAs/GaAs lasers with improved optical degradation level
Bugajski Maciej, Zbroszczyk Mariusz, Sajewicz Pawel, Muszalski Jan
pp. 469-475 No PDF file No PDF file in base  
Method of lines – the new vectorial approach to optical phenomena in diode lasers
Czyszanowski Tomasz, Wasiak Michal, Mackowiak Pawel, Sarzala Robert P., Nakwaski Wlodzimierz
pp. 477-483 No PDF file No PDF file in base  
Computer modelling of devices based on AlGaN/GaN heterostructure
Kosnikowski Wojciech, Piasecki Tomasz
pp. 485-491 No PDF file No PDF file in base  
Designing guidelines for nitride VCSELs resonator
Mackowiak Pawel, Wasiak Michal, Czyszanowski Tomasz, Sarzala Robert P., Nakwaski Wlodzimierz
pp. 493-502 No PDF file No PDF file in base  
Application of selective area epitaxy for GaN devices
Paszkiewicz Regina
pp. 503-510 No PDF file No PDF file in base  
Heterojunction In0.53Ga0.47As/InP magnetic field sensors fabricated by molecular beam epitaxy
Przeslawski Tomasz, Wolkenberg Andrzej, Reginski Kazimierz, Kaniewski Janusz
pp. 511-515 No PDF file No PDF file in base  
Numerical modelling of InGaAs infrared photovoltaic detectors
Sioma Marek, Kaniewski Janusz
pp. 517-522 No PDF file No PDF file in base  
Reflectance study of SiO2/Si3N4 dielectric Bragg reflectors
Szerling Anna, Wawer Dorota, Hejduk Krzysztof, Piwonski Tomasz, Wojcik Anna, Mroziewicz Bohdan, Bugajski Maciej
pp. 523-527 No PDF file No PDF file in base  
Numerical calculation of electron density distribution in modulation-doped GaAs/AlGaAs heterostructures
Szymanski Michal, Zbroszczyk Mariusz
pp. 529-534 No PDF file No PDF file in base  

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